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| 2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features * Excellent high frequency characteristics fT = 1.4GHz (typ.) * Low output capacitance C ob = 2.4 pF (typ.) * Isolated package TO-126FM Outline TO-126FM 12 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25C Symbol VCBO VCEO VEBO IC ic(peak) PC PC * Tj Tstg 1 Ratings 110 110 3 200 400 1.4 7 150 -55 to +150 Unit V V V mA mA W W C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE VBE Min 110 110 -- -- 30 -- -- 1.0 -- Typ -- -- -- -- -- -- -- 1.4 2.4 Max -- -- 10 10 100 1 1 -- 3.5 V V GHz pF Unit V V A A Test Conditions I C = 10E A, IE = 0 I C = 1mA, RBE = VCB = 100V, IE = 0 VE B = 3V, IC = 0 VCE = 10 V, IC = 10mA VCE = 10 V, IC = 10mA I C = 200mA, IB = 20mA VCE = 10 V, IC = 50mA VCB = 30V, IE = 0 f = 1MHz Collector to emitter saturation VCE(sat) voltage Gain bandwidth product fT Collector Output capacitance Cob 2SC5390 Main Characteristics Collector Power Dissipation vs. Temperature Pc (W) 8 1000 I C (mA) Areaof Safe Operaion PW = 1 ms 10 ms n tio era ) Op 5C DC c = 2 (T ic(peak) 300 I max C 100 30 10 3 1 1 shot pulse Ta = 25 C 1 Collector Power Dissipation 6 Tc 4 2 Ta 0 50 100 150 200 Ambient Temperature Ta (C) Case Temperature Tc (C) Collector Current 3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 200 I C (mA) DC Current Transfer Ratio vs. Collector Current 500 h FE 200 25 C 100 50 Ta = -25 C 20 10 5 10 1 V CE = 10 V Pulse Test 2 5 10 20 50 100 200 Collector Current IC (mA) 75 C 100 1 mA Ta = 25 C Pulse Test 0 IB = 0 5 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio Collector Current mA A 10 9 mmAA 8 mA 7m 6 mA 5 A 4m A m 3 A 2m 2SC5390 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 5 Base to Emitter Saturation Voltage V BE(sat) (V) 1 0.5 0.2 Ta = -25 C 0.1 75 C I C / I B = 10 Pulse Test I C / I B = 10 Pulse Test 2 Ta = -25 C 1 25 C 25 C 0.5 0.05 0.02 0.01 1 2 5 10 20 75 C 0.2 0.1 50 100 200 1 Collector Current IC (mA) 2 5 10 20 50 100 200 Collector Current IC (mA) 5 Gain Bandwidth f T (MHz) Collector Output Capacintace Cob (pF) Gain Bandwidth vs. Collector Current Collctor Output Capacitance vs. Collector to Base Voltage 10 5 2 1 2 1 0.5 0.5 0.2 0.1 1 2 5 10 20 VCE = 10 V Pulse Test 50 100 200 (mA) Collector Current IC 0.2 I E = 0 , f = 1MHz 0.1 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 2SC5390 Package Dimentions Unit: mm 1.0 8.0 0.4 6.0 3.5 1.9 Max 3.2 +0.15 -0.1 3.2 0.4 11.0 0.5 1.7 15.6 0.5 0.65 0.7 2.29 0.5 2.29 0.5 Hitachi Code TO-126FM -- EIAJ -- JEDEC Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. This datasheet has been download from: www..com Datasheets for electronics components. |
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